Apparent size effects on dopant activation in nanometer-wide Si fins

Due to the dramatic downscaling of device features in recent technology nodes, characterizing electrical properties these structures is becoming ever more challenging as it often requires metrology able probe local variations dopant and carrier concentration with high accuracy. As no existing technique meet all requirements, a correlative approach generally considered solution. In this article, we study size-dependent effects on activation nanometer-wide Si fins using novel approach. We start by showing that micro four-point can be used precisely measure resistance B doped (laser) annealed fins. Next, use transmission electron microscopy scanning spreading show observed width dependence apparent sheet explained either partially or fully inactive region forming along top fin sidewalls according annealing conditions.